Fermi Level Position at Semiconductor Surfaces

Absence of Fermi-level pinning at cleaved nonpolar InN surfaces.

Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well above the conduction band edge, leading to strong surface band bending and electron accumulation. Using cross-sectional scanning photoelectron microscopy and spectroscopy, we show definitive evidence of unpinned Fermi level for in situ cleaved a-plane InN surfaces. To confirm the presence or absence of ...

Optical rectification at semiconductor surfaces.

Fermi-level pinning can determine polarity in semiconductor nanorods

First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi-level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potenti...

Electron states and recombination velocities at semiconductor surfaces and interfaces

2014 The concept of dangling bond states is reviewed. It is shown that the Schottky barrier height can be correlated with the average self energy of surface dangling bonds. The same property holds true for band offsets at semiconductor heterojunctions. The model explains the relation found by Tersoff between these two quantities. A second part is devoted to the theoretical determination of surf...

Comments on Holographic Fermi Surfaces

Recently, a mechanism for the development of a fermi surface in a holographic model of large N QCD with a baryon chemical potential was proposed. We examine similar constructions to determine when this mechanism persists. We find a class of models in which it does.